| PART |
Description |
Maker |
| ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD
2.5V In-System Programmable SuperFAST?/a> High Density PLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| 8600V ISPLSI8600V-90LB272 ISPLSI8600V-125LB492 ISP |
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 24 ns, PBGA492
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 24 ns, PBGA272
GT 14C 14#16 SKT RECP LINE EE PLD, 16 ns, PBGA492
3.3V In-System Programmable SuperBIGHigh Density PLD 3.3在系统可编程SuperBIG⑩高密度可编程逻辑器件
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 13.5 ns, PBGA492
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB272 ISPLSI55 |
Electrically-Erasable Complex PLD
In-System Programmable 3.3V SuperWIDEHigh Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
In-System Programmable 3.3V SuperWIDE?High Density PLD
|
Lattice Semiconductor Corporation
|
| MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
SCREW MACHINE SLOTTED 6-32X3/4
High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44
High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| ISPLSI2032A-110LT48I ISPLSI2032A-135LJI ISPLSI2032 |
In-System Programmable High Density PLD EE PLD, 8 ns, PQFP44
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
In-System Programmable High Density PLD EE PLD, 10 ns, PQCC44
In-System Programmable High Density PLD EE PLD, 10 ns, PQFP48
In-System Programmable High Density PLD EE PLD, 7.5 ns, PQFP44
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2064V-100LJ84 ISPLSI2064V-100LJ84I ISPLSI206 |
3.3V High Density Programmable Logic
3.3V High Density Programmable Logic 3.3高密度可编程逻辑
3.3V High Density Programmable Logic EE PLD, 15 ns, PQCC84
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| DK50-1.0 DK50-1.0M DK44-1.0 DK44-1.0M DK60-1.0 DK6 |
1.0mm High Density FLEX (300V, 105隆?C)
1.0mm High Density FLEX (300V, 105掳C)
1.0mm High Density FLEX (300V, 105°C)
|
Yamaichi Electronics Co., Ltd.
http://
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度，大电3 -相全波桥式整流器（反向电000V的温5℃时平均整流电流45A条，高密度，大电流，三相全波桥整流器
HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp.
Semtech Corporation
|
