| PART |
Description |
Maker |
| 2316226 |
End cover for FB-PS-BASE/EX base. Use in power and indicator bus at each end base.
|
PHOENIX CONTACT
|
| G1PM109N1-LF G1PM109N1LF |
Compliant with IEEE 802.3ab standard for 1000 BASE-T
2.5G/5G BASE?T SINGLE PORT
|
Bothhand USA, LP.
|
| EPG4001S EPG4001S-RC EPG4001S-15 |
11000Base-T Module
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
PCA ELECTRONICS INC.
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
Samsung Semiconductor Co., Ltd.
|
| 6814 |
LAN 10 BASE-T / 100 BASE-T Single TX Transformer
|
FILTRAN[Filtran LTD]
|
| IL5 IL1-X001 IL1-X016 IL2-X009 IL2-X016 IL2-X009T |
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
IL1, IL2, IL5 - Optocoupler, Phototransistor Output, with Base Connection
|
Vishay Semiconductors
|
| 2SA733 |
Collector-Base Voltage: VCBO=-60V Emitter to base voltage VEBO -5.0 V
|
TY Semiconductor Co., Ltd
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| MX98745 |
100 BASE-TX/FX Repeater Controller(100 BASE-TX/FX 中继器控制器) 8 CHANNEL(S), 100M bps, LOCAL AREA NETWORK CONTROLLER, PQFP16
|
Macronix International Co., Ltd.
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
