Part Number Hot Search : 
1N5522 05F2F 62012 0459846 MX584KN C190KSKT 922102 MX584
Product Description
Full Text Search

2N4338-DIE - FET

2N4338-DIE_8743262.PDF Datasheet

 
Part No. 2N4338-DIE
Description FET

File Size 224.72K  /  5 Page  

Maker

New Jersey Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 2N4338
Maker:
Pack:
Stock:
Unit price for :
    50: $2.58
  100: $2.46
1000: $2.33

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ 2N4338-DIE Datasheet PDF Downlaod from Datasheet.HK ]
[2N4338-DIE Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for 2N4338-DIE ]

[ Price & Availability of 2N4338-DIE by FindChips.com ]

 Full text search : FET


 Related Part Number
PART Description Maker
MTD20N03HDL MTD20N03HL 20N03HL HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
MOTOROLA[Motorola, Inc]
Motorola, Inc.
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
ON Semiconductor
Motorola, Inc.
MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola, Inc]
MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
2SK735 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
NEC, Corp.
NEC[NEC]
PHD16N03LT N-channel TrenchMOS?/a> logic level FET
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS⑩ logic level FET
From old datasheet system
N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
ATF-13XXX ATF-10XXX Low Noise Gallium Arsenide FET(低噪声砷化镓 FET)
Agilent(Hewlett-Packard)
NE76184A-T1A NE76184A-SL NE76184A NE76184A-T1 NE76 GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
NEC Corp.
NEC[NEC]
http://
BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET
NXP Semiconductors N.V.
MTB8N50E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
BUK9614-55A BUK9514-55A Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
NXP Semiconductors
PHILIPS[Philips Semiconductors]
2SK2095N A5800286 Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
ROHM[Rohm]
 
 Related keyword From Full Text Search System
2N4338-DIE pulse 2N4338-DIE Logic 2N4338-DIE header 2N4338-DIE terminals description 2N4338-DIE MARKING
2N4338-DIE suply voltase IC 2N4338-DIE state diagram 2N4338-DIE 13MHz 2N4338-DIE application 2N4338-DIE System
 

 

Price & Availability of 2N4338-DIE

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.18076705932617