| PART |
Description |
Maker |
| HRP88N08K |
80V N-Channel Trench MOSFETnull
|
SemiHow Co.,Ltd.
|
| MDP1932 MDP1932TH |
Single N-channel Trench MOSFET 80V, 120A, 3.4m(ohm)
|
MagnaChip Semiconductor...
|
| FQU24N08 FQD24N08 FQD24N08TF FQD24N08TM |
80V N-Channel QFET
80V N-Channel MOSFET 19.6 A, 80 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQB17N08L FQI17N08L FQB17N08LTM FQI17N08LTU |
80V N-Channel Logic Level QFET
80V LOGIC N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF1312S IRF1312 IRF1312L IRF1312STRL IRF1312STRR |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
IRF[International Rectifier]
|
| CDSV6-4448SD-G CDSV6-4448AD-G CDSV6-4448TI-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=100mA
|
Comchip Technology
|
| CDSV3-217-HF |
Halogen Free Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
|
Comchip Technology
|
| 2SB920 2SB920L 2SD1236L |
80V/5A Switching Applications 80V/5A开关应
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| HUF75531SK8 FN4848 |
6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET 6 A, 80 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
6A/ 80V/ 0.030 Ohm/ N-Channel/ UltraFET Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| NDP408 NDP408A NDP408AE NDP408B NDP408BE NDB408BE |
N-Channel Enhancement Mode Field Effect Transistor2A,80V.9ΩN沟道增强型MOS场效应管（漏电流12A, 漏源电压80V，导通电.9Ω 11 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
