| PART |
Description |
Maker |
| FGH40N120AN |
High speed switching
1200V NPT IGBT
|
Fairchild Semiconductor
|
| 2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC3307 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| 2MBI150HH-120-50 |
HIGH SPEED IGBT MODULE 1200V / 150A / 2 in one package
|
Fuji Electric
|
| 2MBI200HH-120-50 |
HIGH SPEED IGBT MODULE 1200V / 200A / 2 in one package
|
Fuji Electric
|
| FGW25N120VD |
Discrete IGBT (High-Speed V series) 1200V / 25A
|
Fuji Electric
|
| 2SK2035 E001424 |
HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
From old datasheet system
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM6N16FE |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
High Speed Switching Applications Analog Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
