| PART |
Description |
Maker |
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| LTC4440ES6-5 LTC4440-5 LTC4440EMS8E-5 LTC4440EMS8E |
High Speed, High Voltage High Side Gate Driver; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
High Speed, High Voltage, High Side Gate Driver
High Speed, High Voltage High Side Gate Driver; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C 1.1 A BUF OR INV BASED MOSFET DRIVER, PDSO8
|
LINEAR TECHNOLOGY CORP
Linear Technology, Corp.
|
| AM27C1024-300DIB AM27C1024-350/BUA AM27C1024-205DC |
Constant Frequency Current Mode Step-Up DC/DC Controller in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
150mA, Micropower, Low Noise, VLDO Linear Regulator; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
High Efficiency Thermoelectric Cooler Controller; Package: QFN; No of Pins: 32; Temperature Range: -40°C to 125°C
High Efficiency Thermoelectric Cooler Controller; Package: SSOP; No of Pins: 28; Temperature Range: -40°C to 125°C
Micropower, Regulated 3.3V/5V Charge Pump with Shutdown in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C
8-Channel, 12-Bit, 1.25Msps Sampling ADCs; Package: SSOP; No of Pins: 48; Temperature Range: 0°C to 70°C
x16 EPROM x16存储
Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
|
OlympicControls, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 222212046472 120ATC 222212015102 222212015152 2222 |
Aluminum Capacitors Axial High Temperature, High Ripple Current
|
VISAY[Vishay Siliconix]
|
| LT6107 LT6107MPS5-TR LT6107MPS5-TRM LT6107MPS5-TRM |
High Temperature High Side Current Sense Amp in SOT-23
|
Linear Technology
|
| TMPG06-10 TMPG06-10A TMPG06-11 TMPG06-11A TMPG06-1 |
Automotive Transient Voltage Suppressors (High Temperature Stability & High Reliability Conditions)
|
VISAY[Vishay Siliconix]
|
| TMPG06-10 TMPG06-10A TMPG06-7.5A TMPG06-6.8 TMPG06 |
PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| BTA416Y-600B BTA416Y-600C BTA416Y-800B BTA416Y-800 |
16 A three-quadrant triacs insulated, high commutation, high temperature
|
NXP Semiconductors
|
| 3KASMC10AHE3/9AT 3KASMC10AHE3/57T 3KASMC24A |
Surface Mount Automotive Transient Voltage Suppressors (High Temperature Stability & High Reliability Conditions)
|
Vishay Siliconix
http://
|
