| PART |
Description |
Maker |
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| HEDS-5120-A13 HEDT-9100 HEDS-5120-A14 HEDT-9101-I0 |
HEDT-9101#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HEDT-9100#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HEDT-9001#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HIGH TEMPERATURE 125 DEGREE CELCIOUS TWO CHANNEL OPTICAL INCREMENTAL ENCODER MODULES
ANALOG Replaced PQ025EH02ZPH
High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules 高温125℃双通道光学增量编码器模
SINGLE, 2 CHANNELS, ROTARY OPTICAL POSITION ENCODER
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Avago Technologies, Ltd.
|
| 125293U020AJ1B 125114U005AJ1B 125114U6R3AC1B 12523 |
The Pace-Setter for Long Life and High Temperature
Type 125 -55 篓卢C to 125 篓卢C, Ultra-High Temperature, Military Grade
Type 125 -55 潞C to 125 潞C, Ultra-High Temperature, Military Grade
Type 125 -55 oC to 125 oC, Ultra-High Temperature, Military Grade
Type 125 -55 ìC to 125 ìC, Ultra-High Temperature, Military Grade
|
Cornell Dubilier Electr...
List of Unclassifed Man...
ETC
List of Unclassifed Manufacturers
http://
Cornell Dubilier Electronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TX7-705C-S-HP |
High precision SMD TCXO High frequency stability vs. temperature 0.10 ppm
|
QUARTZCOM the communications company
|
| HVS0805 HVS2010 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
| PHT |
High Precision Wraparound - High Temperature (230 掳C) Thin Film Chip Resistors
|
Vishay Siliconix
|
| T591 T591B107M006ATE025 T591B107M010ATE025 T591B10 |
T591/T598 High Humidity/High Temperature Automotive Grade Polymer Electrolytic, 2.5 - 50 VDC
|
Kemet Corporation
|
| BTA412Y BTA412Y-600B BTA412Y-600C BTA412Y-800B BTA |
12 A Three-quadrant triacs, insulated, high commutation, high temperature
|
NXP Semiconductors N.V.
|
|
