| PART |
Description |
Maker |
| 2SC3071 |
High-hFE/ Low-Frequency General-Purpose Amp Applications
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
NPN Epitaxial Planar Silicon Transistor for High hFE, Low-Frequency General-Purpose Amplifier Applications(高直流电流增益，低频通用放大器应用的NPN硅外延平面型晶体 瑞展硅晶体管HFE的高，低频通用放大器应用（高直流电流增益，低频通用放大器应用的npn型硅外延平面型晶体管
|
Sanyo Semicon Device
Sanyo Electric Co., Ltd.
|
| CZT250K10 |
SURFACE MOUNT EXTREMELY HIGH hFE NPN SILICON DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| CZT250K |
SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CZT900K |
SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR
|
Central Semiconductor C...
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC4204 0449 |
NPN Epitaxial Planar Silicon Transistor High-hFE, AF Amplifier Applications
From old datasheet system
|
Sanyo
|
| 2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE.
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| 2SC3792 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| CFD2059R CFD2059O |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O
|
Continental Device India Limited
|
| CN451 CN450 |
General Purpose Transistors designed for Small and Medium Signal Amplification from D.C to Radio Frequencies
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 50 - 150 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 100 - 300 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
