| PART |
Description |
Maker |
| CY62148EV30LL-45ZSXA |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| CY62148ELL-45ZSXA CY62148ELL-45ZSXI CY62148ELL-55S |
4-Mbit (512 K ? 8) Static RAM 4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| CY7C1049DV33-10VXI CY7C1049DV33-10VXIT CY7C1049DV3 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62157EV30LL-45ZSXA CY62157EV30LL-55ZXE CY62157EV |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY62158ELL-45ZSXI |
8-Mbit (1 M x 8) Static RAM Automatic power down when deselected MoBL® 8-Mbit (1M x 8) Static RAM 1M X 8 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| AM41DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM (Prelimin From old datasheet system
|
AMD Inc
|
| CY62168DV3009 CY62168DV30LL-55BVI |
16-Mbit (2M x 8) MoBL垄莽 Static RAM 16-Mbit (2M x 8) MoBL Static RAM
|
Cypress Semiconductor
|
| CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48 16-Mbit (1M x 16) Pseudo Static RAM CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
| Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8 VALVE SHUT OFF 1/8 阀门关闭了1 / 8 VALVE STARTUP 1/2 阀门启 / 2 VALVE SHUT OFF 1/4 阀门关闭了1 / 4 VALVE SHUT OFF 3/4 VALVE STARTUP 1/4 IC SRAM 512KX36 2.5V SYN 100TQFP VALVE SHUT OFF 1/2 BRACKET T 1-Mbit (128K x 8) Static RAM IC MCU 8K FULL SPEED USB 28SDIP BRACKET L 1M/512K FAST ASYNC SRAM 5V, 3.3V, ISR High-Performance CPLDs 256K (32K x 8) Static RAM -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash SPACER EZ-USB FX2LP USB Microcontroller High-Speed USB Peripheral Controller 1-Mbit (64K x 16) Static RAM 2M x 8 Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture BRANCH UNIT
|
AMIC Technology, Corp. Vishay Intertechnology, Inc. NXP Semiconductors N.V. Harwin PLC
|
| AM41DL3248GT45IS M41000002S M41000002L |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同步写闪存和8兆位 M中的x 8-Bit/512亩x 16位),静态存储器 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2x 16位).0伏的CMOS只,同步写闪存和8兆位 M中的x 8-Bit/512x 16位),静态存储器
|
Samsung Semiconductor Co., Ltd. Advanced Micro Devices, Inc.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|