| PART |
Description |
Maker |
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| N01L163WN1AT2-55I N01L163WN1A N01L163WN1AB2-55I N0 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 1MB的超低功耗CMOS SRAM的异
|
NanoAmp Solutions, Inc.
|
| N01L163WC2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
| N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 1MB的超低功耗CMOS SRAM的异
|
NanoAmp Solutions, Inc.
|
| N01M0818L1 N01M0818L1AN N01L0818L1AD-85I N01L0818L |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| MR4S16AYS35 MR0A08ACYS35 MR0A08AVYS35 MR0A08AYS35 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
|
FREESCALE[Freescale Semiconductor, Inc]
|
| IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
Static RAMs (1Mb)
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| GS71208TP-8 |
128K x 8 1Mb Asynchronous SRAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
|
GSI Technology, Inc.
|
