| PART |
Description |
Maker |
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管
From old datasheet system
SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| BFR540 BFR540_4 BFR540/T1 BFR540-2015 |
NPN 9 GHz wideband transistor
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND
|
Quanzhou Jinmei Electronic ...
Philips
|
| 2SD669-X-AA3-R 2SD669-X-AB3-R 2SD965-X-AB3-R 2SD66 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 双极晶体管权力的一般用
LOW VOLTAGE HIGH CURRENT TRANSISTOR
|
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Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
友顺科技股份有限公司
http://
|
| EMX28 |
Low frequency transistor, complex (2-elements) Bipolar Transistor
|
Rohm CO.,LTD.
|
| 2N3765U4 2N3764U4 JANS2N3764U4 JANSD2N3764U4 JAN2N |
PNP Transistor
BJT( BiPolar Junction Transistor)
|
Microsemi
|
