PART |
Description |
Maker |
UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
CY62138FLL-45SXI CY62138FLL-45SXIT |
2-Mbit (256 K 8) Static RAM
|
Cypress
|
CY62138FV30 CY62138FV30LL-45ZAXI CY62138FV30LL-45Z |
2-Mbit (256 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
AM42DL1614DT45IT AM42DL1614DB45IT AM42DL1614DB35IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位2米8 1个M x 16位).0伏的CMOS只,同时作业闪存兆位256亩16位),静态存储器 Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位米8 1个M x 16位).0伏的CMOS只,同时作业闪存兆位56亩16位),静态存储器 Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24 HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22 HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
|
SST4117A SST4118A |
1-Mb (128K x 8) Static RAM 1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我(直)| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
CY7C1041DV33-10BVXIT |
CY7C1041DV33 4-Mbit (256 K x 16) Static RAM
|
Cypress Semiconductor
|
AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices] SPANSION
|
CYU01M16SCEU-70BVXI CYU01M16SCE CYU01M16SCEU-70BVX |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48 16-Mbit (1M x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|