| PART |
Description |
Maker |
| C315C322GDG5HA7301 C326C322GDG5HA7301 C350C322GDG5 |
High Voltage Goldmax, 300 Series, Conformally Coated, C0G Dielectric, 500 ?3,000 VDC (Commercial Grade)
High Voltage Goldmax, 300 Series, Conformally Coated, C0G Dielectric, 500 ?3,000 VDC (Commercial Grade)
|
Kemet Corporation
|
| CHTA42LPT |
High Voltage NPN Transistor VOLTAGE 300 Volts CURRENT 500 mAmpere
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SPX2091 |
1 AMP 9,300 VOLTS HIGH VOLTAGE RECTIFIER BRIDGE STACK
|
SSDI[Solid States Devices, Inc]
|
| H11D1 H11D2 |
6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)
|
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| FMMTA92 FMMTA93 FMMTA92TA FMMTA92R |
200 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
PNP High Voltage Transistor
|
ZETEX PLC
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| GC44101 GC4495 GC4491 GC4494 GC4490 GC4492 GC4493 |
CONTROL DEVICES - HIGH VOLTAGE PIN DIODES
300 V, SILICON, PIN DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| NCV33375D-2.5R2G NCV33375ST1.8T3G MC33375ST-3.0T3 |
300 mA, Low Dropout Voltage Regulator with On/Off Control 3 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PDSO4
300 mA, Low Dropout Voltage Regulator with On/Off Control 2.5 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PDSO4
300 mA, Low Dropout Voltage Regulator with On/Off Control 5 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PDSO8
300 mA, 1.8 V ?1% Low Dropout Voltage Reg
300 mA, Low Dropout Voltage Regulator with On/Off Control
|
ON Semiconductor
|
| BF820W |
Low current (max. 50 mA) High voltage (max. 300 V).Collector current IC 50 mA
|
TY Semiconductor Co., Ltd
|
| APT8030JVFR |
POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8030 APT8030B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 27A 0.300 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
|
