| PART |
Description |
Maker |
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
| AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基
1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| 2SK1700 |
Drain Current ?ID= 5A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK528 |
Drain Current ?ID=2A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1703 |
Drain Current ?ID= 5A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK844 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1171 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1211 |
Drain Current ?ID=2.5A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK987 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1462 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
