| PART |
Description |
Maker |
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| NX8561JC NX8501CC-BA NX8501BC-BA NX8501AC-BA NX856 |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
|
NEC[NEC]
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| NDL5003 |
1300NM OPTICAL FIBER COMMUNICATIONS INGAASP DOUBLE HETEROSTRUCTURE LASER DIODE
|
NEC
|
| NDL7701P1 NDL7701P1C NDL7701P1D NDL7701P2 NDL7701P |
1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DFB DC-PBH LASER DIODE MODULE
|
NEC
|
| NDL7910P NX8501BG-CA NX8501BG-BA NX8501 NX8501CC N |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 510纳米光纤通信InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
http://
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
