| PART |
Description |
Maker |
| GA10JT06-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA10JT12-247 |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA10JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA50JT17-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GAP05SLT80-220 |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA50SICP12-227-15 |
Silicon Carbide Junction Transistor/Schottky Diode Co-Pack
|
GeneSiC Semiconductor, ...
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| EC3A01H |
N-Channel Silicon Junction FET - Electret Condenser Microphone Applications
Junction FETs
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| SSR05C601 SSR05C50 |
SILICON CARBIDE SCHOTTKY RECTIFIER
|
Solid States Devices, Inc
|
