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PD44324185BF5-E33-FQ1-A - 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION

PD44324185BF5-E33-FQ1-A_8490726.PDF Datasheet


 Full text search : 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
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PD46364185BF1-E40-EQ1 PD46364365BF1-E40-EQ1 PD4636 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
Renesas Electronics Corporation
UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
Renesas Electronics Corporation
UPD44324085F5-E50-EQ2 UPD44324365F5-E50-EQ2 UPD443 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
NEC[NEC]
UPD44324085F5-E33-EQ2 UPD44324185F5-E33-EQ2 UPD443 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 36M条位条DDRII SRAM的分离I / O 2字爆发运
NEC Corp.
NEC, Corp.
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
Renesas Technology / Hitachi Semiconductor
UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E3 36M-BIT DDRII SRAM 4-WORD BURST OPERAT
NEC[NEC]
GS8182S18GD-267 GS8182S18GD-267T GS8182S18GD-267I 1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165
18Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
GSI Technology, Inc.
GS8180S18 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位独立I/O接口双数据速率读和写模式静态ΣRAM) 1x 18位独立的I / O西格玛的DDR SRAM的(100万18位独立的I / O接口双数据速率读和写模式静态ΣRAM
GSI Technology, Inc.
CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构(2字突发结18 -兆位的DDR - II SRAM的)
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
NEC, Corp.
CY7C1518KV18-300BZXC 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
 
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