| PART |
Description |
Maker |
| IS45VM32160E-6BLA1 IS45VM32160E-6BLA2 |
4M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS46LR32160B |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| IS42SM32200G |
512K x 32Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42VM32200G |
512K x 32Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42VM16320D |
8M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42RM16400K |
1M x 16Bits x 4Banks Mobile Synchronous DRAM
|
ISSI
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| IS42VM16800F-75BLI |
SYNCHRONOUS DRAM, PBGA54
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| W9812G2GB-75 W9812G2GB-6 W9812G2GB-6I |
1M × 4 BANKS × 32BITS SDRAM
|
Winbond
|
| HYB18L256160B |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAM的针对移动应56兆移动RAM
|
Qimonda AG
|
