| PART |
Description |
Maker |
| FDP12N60NZ FDPF12N60NZ |
N-Channel UniFETTM II MOSFET 600V, 12A, 650m
N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m?
|
Fairchild Semiconductor
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET
CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
200 N-Channel MOSFET
200V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQB5N20L FQI5N20L FQI5N20 FQI5N20LTU |
200V LOGIC N-Channel MOSFET 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
200V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQT5N20 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 1A条（丁）|的SOT - 223
200V N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDD6N50 FDU6N50 |
N-Channel UniFETTM MOSFET 500V, 6A, 900m
Discrete MOSFET
|
Fairchild Semiconductor
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| FDPF3N50NZ |
N-Channel UniFETTM II MOSFET 500V, 3A, 2.5
|
Fairchild Semiconductor
|
| FDD3N50NZ |
N-Channel UniFETTM II MOSFET 500V, 2.5A, 2.5
|
Fairchild Semiconductor
|
| FDD8N50NZTM FDD8N50NZ |
N-Channel UniFETTM II MOSFET 500V, 6.5A, 850m
|
Fairchild Semiconductor
|
