Part Number Hot Search : 
CLE336 S8550 1A106 2SB681 SA124 RTAN430X TSR2100 C143E
Product Description
Full Text Search

IC42S16160-7TG - 4M x 16Bit x 4 Banks (256-MBIT) SDRAM    4M x 16Bit x 4 Banks (256-MBIT) SDRAM

IC42S16160-7TG_8463724.PDF Datasheet

 
Part No. IC42S16160-7TG IC42S16160-6TG
Description 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
   
File Size 1,213.89K  /  69 Page  

Maker

Integrated Circuit Solu...



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: IC42S16160-7TG
Maker: I.C.S.I
Pack: TSSOP
Stock: Reserved
Unit price for :
    50: $0.86
  100: $0.82
1000: $0.77

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ IC42S16160-7TG IC42S16160-6TG Datasheet PDF Downlaod from Datasheet.HK ]
[IC42S16160-7TG IC42S16160-6TG Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for IC42S16160-7TG ]

[ Price & Availability of IC42S16160-7TG by FindChips.com ]

 Full text search : 4M x 16Bit x 4 Banks (256-MBIT) SDRAM    4M x 16Bit x 4 Banks (256-MBIT) SDRAM


 Related Part Number
PART Description Maker
IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164 DYNAMIC RAM
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
ICSI[Integrated Circuit Solution Inc]
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
JS28F256P33BFA 320003 NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
Numonyx B.V
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
Samsung Electronic
SAMSUNG[Samsung semiconductor]
IC42S32800L-7TG 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
Integrated Circuit Solu...
IC43R16160-7TG IC43R16160-6TG 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM 4米16位4个银行(256兆)DDR SDRAM内存
Panasonic, Corp.
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
K4M51163PC-X 8M x 16Bit x 4 Banks Mobile SDRAM
Samsung semiconductor
K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
 
 Related keyword From Full Text Search System
IC42S16160-7TG Bandwidth IC42S16160-7TG integrated circuit IC42S16160-7TG nec IC42S16160-7TG volts IC42S16160-7TG micro
IC42S16160-7TG quad op amp IC42S16160-7TG wire IC42S16160-7TG Operation IC42S16160-7TG datasheet online IC42S16160-7TG marking code
 

 

Price & Availability of IC42S16160-7TG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.5540549755096