| PART |
Description |
Maker |
| AS8ER128K32Q-250_883C AS8ER128K32Q-250_IT AS8ER128 |
128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS
|
Austin Semiconductor
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
| AT28C010-12TU AT28C010E-15JU |
120NS, TSOP, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 120 ns, PDSO32
150NS, PLCC, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 150 ns, PQCC32
|
Atmel, Corp.
|
| IMS05SH472J IMS05ST101K IMS05WDST101K40 IMS05RU680 |
General Fixed Inductor, IND,FERRITE,4.7MH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,68UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,6.8MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,56UH,5% TOL,5% -TOL
General Fixed Inductor, 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, ROHS COMPLIANT
General Fixed Inductor, IND,FERRITE,150UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,120UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,560UH,5% TOL,5% -TOL
|
Vishay Dale
|
| ACT-E128K32C-150P7Q ACT-E128K32C-120P7Q ACT-E128K3 |
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 CERAMIC, PGA-66
128K X 32 EEPROM 5V MODULE, 200 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 250 ns, CQMA68
128K X 32 EEPROM 5V MODULE, 120 ns, CQMA68
|
Aeroflex, Inc.
|
| W27L01 W27L01P-70 W27L01P-90 W27L01Q-70 W27L01Q-90 |
From old datasheet system
128K X 8 ELECTRICALLY ERASABLE EPROM 128K X 8 EEPROM 12V, 90 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| AT28LV010-20 AT28LV010-25 AT28LV010-20PC AT28LV010 |
1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 200 ns, PDIP32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 250 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| LE24LB1283 |
Two Wire Serial Interface EEPROM (128k EEPROM)
|
Sanyo Semicon Device
|
| LE24CB1283 |
Two Wire Serial Interface EEPROM (128K EEPROM)
|
Sanyo Semicon Device
|
| GLS29EE010-70-4C-WHE GLS29EE010-70-4C-NHE-T SST29E |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 FLASH 5V PROM, 70 ns, PDSO32
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| SST29EE010-150-4C-EH SST29EE010-250-4C-NH SST29EE0 |
1 Mbit (128K x 8) page-mode EEPROM
From old datasheet system
1 Mbit (128K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
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