| PART |
Description |
Maker |
| 2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| 2SB1589 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| 2SC5212 |
Small Signal Transistor
Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BC369 C62702-C748 |
From old datasheet system
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BC847S KC847S |
Low collector-emitter saturation voltage
|
TY Semiconductor Co., Ltd
|
| DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| 2SB906 |
Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| 2SB1628 |
High current capacitance. Low collector saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SA1730 |
Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
