| PART |
Description |
Maker |
| V23990-P825-F-P2-19 |
Typical average static loss as a function of output current
|
Vincotech
|
| E9300B E9300A E9300H E9301A E9301B E9301H |
E9300B E-Series Average Power Sensor
E9300A E-Series Average Power Sensor
E9300H E-Series Average Power Sensor
E9301A E-Series Average Power Sensor
E9301B E-Series Average Power Sensor
E9301H E-Series Average Power Sensor
|
Agilent (Hewlett-Packard)
|
| MMBTA20LT1_D ON2135 MMBTA20 |
40 AMP MINI-ISO AUTOMOTIVE RELAY
TYPICAL STATIC CHARACTERISTICS
From old datasheet system
General Purpose Amplifier
|
Motorola, Inc.
ON Semi
|
| CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM
2M x 8 Static RAM
Microwire Serial EEPROM
16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM
512K x 32 Static RAM
|
Atmel, Corp.
|
| MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| MCP6041 MCP6043 MCP6044 MCP6042 MCP6044T MCP6041T |
The MCP6041 operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 nA ...
The MCP6044 quad operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 ...
The MCP6043 operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 nA ...
The MCP6042 dual operational amplifier (op amp) has a gain bandwidth product of 14 kHz with a low typical operating current of 600 ...
600 nA, Rail-to-Rail Input/Output Op Amps
|
MICROCHIP[Microchip Technology]
|
| FMCE-0528 FMCE-0528-TR |
Attenuation to 60 dB at 500 kHz, typical Operating temperature -55掳 to 125掳C
Attenuation to 60 dB at 500 kHz, typical Operating temperature -55° to 125°C
|
Interpoint Corporation Company
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CS48 |
Average Weight: 0.2 g
|
Xilinx, Inc
|
