| PART |
Description |
Maker |
| LTC3874 |
PolyPhase Step-Down Synchronous Slave Controller with Sub-Milliohm DCR Sensing
|
Linear Technology
|
| MAX1801 MAX1801EKA-T |
Digital Camera Step-Up Slave DC-DC Controller
From old datasheet system
Digital-Camera Step-Up Slave DC-DC Controller
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products
|
| W83194BR-312 W83194BR-63S W83194BR-39A W83195AR-S |
Step-less VIA (tm) KT-266 main clock gen
Step-less Frequency SiS 630S, Clock Gen., with S.S.T.
Step-less Frequency VIA PC133, Intel BX Clock Gen., with S.S.T.
200MHz Solano 815 Clock Gen., 3-DIMM, with S.S.T.
200MHz Solano 815 Clock Gen., 2-DIMM, with S.S.T.
IPMI BMC plus hardware monitor and five sets I2C Master/Slave SMBus
Step-less Intel (tm) 845 main clock gen
Step-less Freqency SiS 730S, Clock Gen.,with S.S.T
Notebook integrated LPC I/O controller, flash interface, ISA KBC interface and W83877A
MDPCM Voice/Melody w/40x8 ~ 16x4 LCD, 80x4 LCD RAM, 1/4&1/8 Duty, 1/3&1/4 Bias, 16Kx20 ROM, 896*4 RA
W83877TF plus KBC, CIR, RTC
|
Winbond Electronics
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| ADE7752BARWZ-RL |
Polyphase Energy Metering IC with Pulsed Output
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| MAXQ318009 MAXQ3180 MAXQ3180-RAN |
Low-Power, Multifunction, Polyphase AFE
|
Maxim Integrated Produc...
Maxim Integrated Products
|
| MAXQ31800912 |
Low-Power, Multifunction, Polyphase AFE
|
Maxim Integrated Products
|
| ADE7752 |
Polyphase Energy Metering IC with Pulse Output
|
Analog Devices
|
| LTC3892EFE-1 |
PolyPhase High VOUT Synchronous Buck Converter
|
Linear Technology
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
