| PART |
Description |
Maker |
| CJF15028 |
36.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| CJF3055 |
30.000W Medium Power NPN Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| 2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
| CJF15031 CJF15030 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE.
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| CSA748 |
15.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 2.000A Ic, 30 hFE. Complementary CSC1398
|
Continental Device India Limited
|
| ZTX652 ZTX653 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
NPN Medium Power Transistor
|
Zetex Semiconductors
|
| CFD1025 |
35.000W Darlington NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 1500 - 30000 hFE.
NPN PLANAR POWER DARLINGTON TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
