| PART |
Description |
Maker |
| CCR-33S3O-T CCR-33 CCR-33S1C-N CCR-33S1C-R CCR-33S |
Miniature DC-18GHz SPDT Switch 微型DC - 18GHz SPDT开
|
Teledyne Technologies, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PE4283 4283-00 4283-01 4283-02 4283-51 4283-52 |
SPDT High Power UltraCMOS?/a> DC - 4.0 GHz RF Switch
SPDT High Power UltraCMOSDC - 4.0 GHz RF Switch
SPDT High Power UltraCMOS⑩ DC - 4.0 GHz RF Switch
|
http://
PEREGRINE[Peregrine Semiconductor Corp.]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| AWS5503 AWS5503S15 |
The AWS5503 is a Single Pole Double Throw (SPDT) GaAs MMIC assembled in a MSOP-8 plastic package.
GaAs IC High Power SPDT Reflective Switch Positive Control DC-3 GHz
|
Anadigics Inc
|
| TPD03-02G18BS |
2-18GHz 3-Way Power Divider
|
Transcom, Inc.
|
| TPD02-06G18S |
18GHz 2-Way Power Divider
|
Transcom, Inc.
|
| TPD03-05G18BS |
5-18GHz 3-Way Power Divider
|
Transcom, Inc.
|
| PE9354ES 9354-00 9354-01 9354-11 PE9354 PE9354-EK |
SPDT High Power UltraCMOS?/a> RF Switch Rad hard for Space Applications
SPDT High Power UltraCMOS RF Switch Rad hard for Space Applications
SPDT High Power UltraCMOSRF Switch Rad hard for Space Applications
SPDT High Power UltraCMOS⑩ RF Switch Rad hard for Space Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
