| PART |
Description |
Maker |
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| TSMF1000 |
High Speed IR Emitting Diode in ?SMD Package
High Speed IR Emitting Diode in ?SMD Package
High Speed IR Emitting Diode in SMD Package
From old datasheet system
|
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| RD0106T-H RD0106T-TL-H RD0106T12 |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMOD4448 CENTRALSEMICONDUCTORCORP-CMOD4448 |
ULTRAminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| 200FXH13 E000411 200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS)
DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
From old datasheet system
|
ToshibaSemiconductor
Toshiba Semiconductor
|
| CMPD415010 |
SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
| CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
| NTE2558 |
Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode
|
NTE[NTE Electronics]
|
