| PART |
Description |
Maker |
| FDI025N06 |
60V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ
N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
|
Fairchild Semiconductor
|
| IRFF024 |
60V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET?TRANSISTORS
60V, N-CHANNEL
|
IRF[International Rectifier]
|
| FDD5612 |
2MM SOCKET STRIPS
60V N-Channel PowerTrench?/a> MOSFET
60V N-Channel PowerTrench⑩ MOSFET
60V N-Channel PowerTrench MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQB50N06L FQI50N06L FQB50N06 FQI50N06 FQI50N06LTU |
60V LOGIC N-Channel MOSFET 52.4 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
60V N-Channel Logic level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管（漏电2.5A, 漏源电压-60V，导通电.3Ω
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ596 2SJ596TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| RJF0618JPE |
60V-40A Silicon N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| FDB035AN06F085 FDB035AN06A012 |
N-Channel PowerTrenchMOSFET 60V, 80A, 3.5m
N-Channel PowerTrench? MOSFET 60V, 80A, 3.5mΩ
|
Fairchild Semiconductor
|
| FDB070AN06F085 |
N-Channel PowerTrenchMOSFET 60V, 80A, 7m
N-Channel PowerTrench? MOSFET 60V, 80A, 7mΩ
|
Fairchild Semiconductor
|
| FQB47P06 FQI47P06 FQB47P06TMAM002 FQI47P06TU |
60V P-Channel MOSFET
60V P-Channel QFET
|
Fairchild Semiconductor Corporation
|
| FQD13N06 FQD13N06TF FQD13N06TM FQU13N06 FQU13N06TU |
60V N-Channel QFET
60V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
