| PART |
Description |
Maker |
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| NESG2031M05-T1-A NESG2031M05 NESG2031M05-T1 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2030M04-T2-A NESG2030M04 NESG2030M04-A NESG203 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2101M05-T1-A NESG2101M05 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2101M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| TDA7326 TDA7326D |
AM-FM RADIO FREQUENCY SYNTHESIZER
|
STMicroelectronics
|
| MCRF450 MCRF452 MCRF452/0M MCRF455 |
The MCRF45x family is a contactless read/write passive Radio Frequency Identification (RFID) IC device that is optimized for 13.56 MHz RF carrier signal. The device needs an external LC resonant circuit to communicate with interrogator wir
The MCRF45x family is a contactless read/write passive Radio Frequency Identification (RFID) IC device that is optimized for 13.56 ...
|
Microchip
|
| RFM03U3CT |
Radio-frequency power MOSFET
|
TOSHIBA
|
