| PART |
Description |
Maker |
| C2M0280120D |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| GR1000MT17J |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
| GR160MT12K |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
| C3M0065100K |
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
|
Wolfspeed
|
| C3M0030090K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| C3M0075120K |
Silicon Carbide Power MOSFET C3M MOSFET Technology
|
Cree, Inc
|
| SCT3030ALGC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| SCT3080KL SCT3080KLC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| SCT3030KL SCT3030KLC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| SML100M12MSF |
NORMALLY-OFF SILICON CARBIDE POWER JFET
|
Seme LAB
|
|
