| PART |
Description |
Maker |
| NX3008PBKW NX3008PBKW-15 |
30 V, 200 mA P-channel Trench MOSFET
|
NXP Semiconductors
|
| NX3020NAKV NX3020NAKV-15 |
30 V, 200 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| SFF35N20Z SFF35N20M |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET
|
SSDI[Solid States Devices, Inc]
|
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CM200DU-12F |
Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a>
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз
N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| AD7923BRU EVAL-AD7923CB2 AD7923 |
Four Wall Header; No. of Contacts:60; Pitch Spacing:0.1"; No. of Rows:2; Gender:Header; Body Material:Glass-filled Polyester; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:Through Hole RoHS Compliant: No
4-Channel 200 kSPS 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel, 200 kSPS, 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel 200 kSPS, 12-Bit A/D Converter with Sequencer in 16-Lead TSSOP
|
ADC
AD[Analog Devices]
|
| JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
Microsemi, Corp.
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FDS2572 FDS2572NL |
150V N-Channel UltraFET Trench MOSFET
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDA2712 |
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mOhms
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ
|
Fairchild Semiconductor
|
