| PART |
Description |
Maker |
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4X51323PC-7EC30 K4X51323PC-8EC30 |
16M X 32 DDR DRAM, 6 ns, PBGA90 FBGA-90
16M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
|
Applied Micro Circuits, Corp.
|
| HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3)
128Mb (16Mx8) DDR 266B (2.5-3-3)
16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
| HYMD116725A8 HYMD116725A8-L |
16Mx72|2.5V|K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| HYMD116645D8J-D4 HYMD116645D8J-D43 HYMD116645D8J-J |
Unbuffered DDR SDRAM DIMM
16M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Hynix Semiconductor, Inc.
|
| HY5DU28822LT-H |
16M X 8 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| V58C2256164SCE5B |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| NT5DS16M16BW-6K |
16M X 16 DDR DRAM, 0.7 ns, PBGA60
|
NANYA TECHNOLOGY CORP
|
| HY5MS7B2BLFP-6 |
16M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| NT5DS16M16BS-6KL |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
| WED3EL7216S7BC |
16M X 72 DDR DRAM, 0.75 ns, PBGA219
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| EDK2516CBBH-10-E |
16M X 16 DDR DRAM, 7 ns, PBGA60
|
ELPIDA MEMORY INC
|
