PART |
Description |
Maker |
NTMD4184PF NTMD4184PFR2G |
Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode
|
ON Semiconductor
|
NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
5082-2271 50822271 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
KDR393S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI Advanced Semiconductor, Inc.
|
1PS76SB10-15-15 |
Schottky barrier single diode
|
NXP Semiconductors
|
CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
KDR505S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR701S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
SBT10100 SBT1020 SBT102007 SBT1050 SBT1060 SBT1090 |
Schottky Barrier Rectifiers - Single Diode
|
Diotec Semiconductor
|
SB01-15C SB01-15C-TB-E |
Schottky Barrier Diode 150V, 0.1A, Low IR, Single CP
|
ON Semiconductor
|