PART |
Description |
Maker |
STL8NH3LL |
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLATULTRA LOW GATE CHARGE STripFETMOSFET N沟道30 0.012з - 8甲的PowerFLAT⑩超低栅极电荷STripFET⑩MOSFET N-CHANNEL 30 V - 0.012 з - 8 A PowerFLAT⑩ ULTRA LOW GATE CHARGE STripFET⑩ MOSFET N-CHANNEL MOSFET N-CHANNEL 30 V - 0.012 ?- 8 A PowerFLAT ULTRA LOW GATE CHARGE STripFET MOSFET
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
STL55NH3LL |
N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET N-channel 30 V, 0.0079 ヘ, 15 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
STW23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STB23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STF8N90K5 |
Ultra-low gate charge
|
STMicroelectronics
|
STW21N150K5 |
Ultra low gate charge
|
STMicroelectronics
|
STW65N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
SPP20N65C3 SPP20N65C309 SPI20N65C3 SPA20N65C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
STS5N15M3 |
N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh?/a> III Power MOSFET
|
STMicroelectronics
|
SPP03N60C3 SPP03N60C309 SPA03N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPI08N50C3 SPP08N50C3 SPA08N50C3 SPP08N50C309 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
STL20NM20N |
N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET
|
STMicroelectronics
|