PART |
Description |
Maker |
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
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NXP Semiconductors N.V.
|
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
BLF6G20LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
LQ801-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-250P-15 |
Power LDMOS transistor
|
NXP Semiconductors
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