| PART |
Description |
Maker |
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| UPC3242TB-E3-A UPC3240TB |
3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER
|
Renesas Electronics Corporation
|
| BGA622 |
Silicon Germanium Wide Band Low Noise Amplifier
|
INFINEON[Infineon Technologies AG]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| SGA-7489 |
DC-3000 MHZ SILICON GERMANIUM
|
Electronic Theatre Controls, Inc.
ETC
Stanford Microdevices
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| SGA-9189 |
Silicon Germanium HBT Amplifier
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| BFP740F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG340034 NESG340034-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| BFU790F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU710F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
