| PART |
Description |
Maker |
| A67L06181-15 |
1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
|
AMIC Technology
|
| A67L16181E-7.5 A67L06361E A67L06361E-6.5 A67L06361 |
2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM 2米x 1800万米6 LVTTL，流通过ZeBL的SRAM
2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM 2米x 1800万米36 LVTTL，流通过ZeBL的SRAM
CAT 6 BLADE SERVER PATCH CABLE 15 WHT
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GS882Z18AB-250 GS882Z18AB-133 GS882Z18AD-133 GS882 |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5s 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
| GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| A67P83181E-10.0 A67P83181E-8.5 A67P83181E-8.5F A67 |
256K X 18, 128K X 36 LVTTL, Flow-through ZeBL SRAM
|
AMICC[AMIC Technology]
|
| IDT71V67702S85BG IDT71V67902S85BGI IDT71V67902S75B |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| CY7C1383DV25-133AXC CY7C1381DV25-133AXC CY7C1381DV |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
