| PART |
Description |
Maker |
| KVR16LE11S8-4I |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR13LR9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR13LE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| KVR16LN11-4 |
4GB 1Rx8 512M x 64-Bit PC3L-12800
|
List of Unclassifed Man...
|
| HX316C10FW-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| MB81EDS51654510 |
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
| TS4GJFV15 |
4GB USB2.0 JetFlash垄芒V15
4GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
