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IS61LF51218D-10B - 512K x 18 synchronous flow-through static RAM 256K x 32 synchronous flow-through static RAM

IS61LF51218D-10B_8353164.PDF Datasheet

 
Part No. IS61LF51218D-10B IS61LF51218D-10TQ IS61LF51218D-10TQI IS61LF51218D-8.5B IS61LF51218D-8.5TQ IS61LF51218D-8.5TQI IS61LF25632D-9B IS61LF51218D-9B
Description 512K x 18 synchronous flow-through static RAM
256K x 32 synchronous flow-through static RAM

File Size 148.46K  /  21 Page  

Maker

Integrated Silicon Solution Inc



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 Full text search : 512K x 18 synchronous flow-through static RAM 256K x 32 synchronous flow-through static RAM
 Product Description search : 512K x 18 synchronous flow-through static RAM 256K x 32 synchronous flow-through static RAM


 Related Part Number
PART Description Maker
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
Cypress Semiconductor Corp.
IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75B 3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
IDT
Integrated Device Technology, Inc.
IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
IDT71T75702 IDT71T75702S75BG8 IDT71T75702S75BGI ID 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Flow-through SRAM
IDT
CY7C1363AWAF 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM
Cypress
MCM63F919TQ7R MCM63F919ZP8.5 MCM63F919ZP8.5R MCM63 256K x 36 and 512K x 18 Bit Flow??hrough BurstRAM Synchronous Fast Static RAM
256K x 36 and 512K x 18 Bit Flow?Through BurstRAM Synchronous Fast Static RAM
Motorola, Inc
CY7C1355A CY7C1355A-100AC CY7C1355A-100BGC CY7C135 256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture
CYPRESS[Cypress Semiconductor]
IDT71V67702S75PF IDT71V67702S75PFI IDT71V67902 IDT 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect
IDT[Integrated Device Technology]
GS881Z18T-11I GS881Z18T-66I GS881Z36T-80 8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 11 ns, PQFP100
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 18 ns, PQFP100
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 14 ns, PQFP100
GSI Technology, Inc.
GS8160ZV18CT-333I GS8160ZV36CGT-333I GS8160ZV18CGT 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 4.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 4.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PQFP100
GSI Technology, Inc.
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1441AV33 CY7C1443AV33 CY7C1447AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM(36-Mb (1M x 36/2M x 18/512K x 72)流通式SRAM)
Cypress Semiconductor Corp.
 
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IS61LF51218D-10B 器件参数 IS61LF51218D-10B ic中文资料网 IS61LF51218D-10B bus switch IS61LF51218D-10B Silicon IS61LF51218D-10B 価格
 

 

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