PART |
Description |
Maker |
SI8822 |
VDS (V) = 20V ID = 7A (VGS=10V) Drain-Source Voltage VDS 20 V
|
TY Semiconductor Co., L...
|
KI5902DC |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KO3416 |
VDS (V) = 20V ID = 6.5 A RDS(ON) 22mΩ (VGS = 4.5V) RDS(ON) 26mΩ (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
KE3587-G |
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
KI5903DC |
Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
FDN5630 |
N-Channel Power Trench MOSFET VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
|
TY Semicondutor TY Semiconductor Co., Ltd
|
AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压 MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No 1.2V SHUNT REGULATOR
|
Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
|
ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包) MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V From old datasheet system MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
KI4511DY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
SI9926BDY |
Drain-Source Voltage VDS V Gate-Source Voltage VGS -10 V
|
TY Semiconductor Co., Ltd
|
KRF8910 |
Drain- Source Voltage VDS 20 V Gate-to-Source Voltage VGS -20 V
|
TY Semiconductor Co., Ltd
|