| PART |
Description |
Maker |
| TH58BVG3S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG1S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423D |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
TVS ZENER BIDIRECT 1500W 13V SMC
TVS BIDIRECT 1500W 130V SMC
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| IBM11N4845BB IBM11N4845CB |
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 带纠错代码保护的小外形双列直插动态RAM模块) 4米72片，杀死保护ECC的上内存模块米72带纠错代码保护的小外形双列直插动态内存模块）
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 甯????唬????ょ?灏??褰㈠?????????AM妯″?)
|
International Business Machines, Corp.
IBM Microeletronics
|
| SGN02G72F1BQ1SA SGN02G72F1BQ1SA-CCRT SGN02G72F1BQ1 |
204 Pin ECC SO-DIMM
|
Swissbit
|
| KMM372V883BS KMM372V803BK KMM372V803BS KMM372V883B |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
