| PART |
Description |
Maker |
| TH58BYG3S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BYG0S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M366S3354BTS-C7A M374S6553BTS-C7A M374S2953BTS-C7A |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372C803CK KMM372C803CS KMM372C883CK KMM372C883C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
Samsung Electronic
Samsung semiconductor
|
| SLN04G72F1BB1SA-CCRT |
4GB DDR3L ?SDRAM ECC SO-UDIMM
|
List of Unclassifed Man...
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