| PART |
Description |
Maker |
| MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| KTX411TY KTX411T KTX411TGR |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC[KEC(Korea Electronics)]
|
| NP043A2 |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC2098 |
NPN EPITAXIAL PLANAR TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC3022 |
NPN EPITAXIAL PLANAR TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC2800 |
NPN Epitaxial Planar Type
|
Mitsubishi Electric
|
| KRC281M KRC286M KRC282M KRC283M KRC284M KRC285M |
CAP, TANT, 100UF, 10%, 16V, E
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SC4555 0139 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications
From old datasheet system
PNP/NPN Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SC5501 |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
|
Sanyo Semicon Device
|
