| PART |
Description |
Maker |
| EN3094B EN3094 |
Bipolar Transistor, (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SC4489 2SA1709 2SC4489R |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一（c）|园区
High-Voltage Switching Applications
|
Toshiba, Corp.
SANYO[Sanyo Semicon Device]
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| 2SA1416R 2SC3646T 2SC3646R 2SC3646S 2SA1416 |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|叩| 100V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | SOT-89
|
SANYO
NEC, Corp.
|
| ZXTN25100DG ZXTN25100DGTA |
100V NPN high gain transistor in SOT223
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXTN25100DZTA ZXTN25100DZ ZXTN25100DZ-15 |
100V NPN high gain transistor in SOT89
|
Zetex Semiconductors
Diodes Incorporated
|
| HIP2106 HIP2106IB HIP2106IP |
100V/1A Peak/ Low Cost/ High Frequency Half Bridge Driver
100V/1A Peak Low Cost High Frequency Half Bridge Driver
100V/1A Peak, Low Cost, High Frequency Half Bridge Driver CONTROL(100V/1A 峰低成高频半桥驱动控制) 100V/1A山顶，低成本，高频率的一半桥驱动器控制（100V/1A峰值，低成本，高频半桥驱动控制
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 2SB805 |
High collector to emitter voltage: VCEO -100V.
|
TY Semiconductor Co., Ltd
|
| 2SC3970 2SC3970A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 1.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| 2SC4256 |
NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
