| PART |
Description |
Maker |
| SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT15S20BCT ABT15S20BCT APT15S20BCTG |
MOSFET
HIGH VOLTAGE SCHOTTKY DIODE
Schottky Center Tap RECTIFIER; Package: TO-247 [B]; VR (V): 200; IO (A): 15; VF (V): 0.8; trr (nsec): 20; Qrr (nC): 440;
|
Advanced Power Technology Ltd.
MICROSEMI POWER PRODUCTS GROUP
|
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| APT15DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 15; VR (V): 600; trr (nsec): 16; VF (V): 2; Qrr (nC): 250; 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Microsemi, Corp.
|
| IRFB4019 IRFB4019PBF |
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
Kersemi Electronic Co., Ltd...
Kersemi Electronic Co.,...
|
| ISL9N307AD3ST |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| APT2X101D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 100; VR (V): 200; trr (nsec): 39; VF (V): 1.1; Qrr (nC): 840; 100 A, 200 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| XC2C512 |
Optimized for 1.8V systems
|
Xilinx, Inc
|
