| PART |
Description |
Maker |
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| FDC8602 |
Dual N-Channel PowerTrench? MOSFET 100 V, 1.2 A, 350 mΩ
100V Dual N-Channel PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| AM4990NE |
Dual N-Channel 100-V (D-S) MOSFET
|
Analog Power
|
| PMDPB760EN |
100 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| M74HC352B1R M74HC353M1R M54HC352 M54HC352B1R M54HC |
HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT(INV.) HC352: DUAL 4 CHANNEL MULTIPLEXER(INV.)
HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATEOUTPUTINV. HC352: DUAL 4 CHANNEL MULTIPLEXERINV.
12-Bit, 2.5 us Dual DAC, Serial Input, Programmable Settling Time, M temperature 8-CDIP -55 to 125
VDSL Codec 80-LQFP -40 to 85
12-Bit, Single Channel DAC, Parallel, Voltage Out, Low Power, Asynchronous Update 20-SOIC 0 to 70
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| FDS3601 FDS3601NL |
100V Dual N-Channel PowerTrench MOSFET 1.3 A, 100 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
100V Dual N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| APTM10TDUM09P |
139 A, 100 V, 0.009 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Triple dual common source MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
| APTM10DUM05TG10 |
Dual common source MOSFET Power Module 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi Corporation
Microsemi, Corp.
|
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