| PART |
Description |
Maker |
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| SGA-3563 SGA-3563Z |
SGA-3563 DC-5.0 GHz Cascadeable MMIC Amplifier
DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier DC - 5000 MHz的硅锗MMIC放大器级联异质结双极晶体
|
Electronic Theatre Controls, Inc.
sirenza.com
|
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| SL1222101-A SL1222101-B |
TRANS,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻
TRANS,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL
TRANS,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG
|
Ametherm, Inc.
|
| PWB PWB-5000 PWB-5001 PWB-5005 |
TRANS,WALL,9VDC/300mA,F1, 2.5X5.5mm,UL/CUL
TRANS,WALL,9VDC/350mA,F2 2.1mm x 5.5 mm,UL/CUL
TRANS,WALL,12VDC/200MA,F2 2.1mm X 5.5mm,RT. ANGLE
TRANS,WALL,12VDC/200mA,LT GRAY F2,2.5mmX5.5mm,RANGL,UL/CSA 1-OUTPUT 5 W AC-DC REG PWR SUPPLY MODULE
|
Astrodyne, Inc.
|
| BFP620F07 BFP620FH7764 BFP620F |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFR720L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG340033 NESG340033-T1B |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体
CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting
24 V, PNP germanium transistor
20 V, PNP germanium transistor
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
