PART |
Description |
Maker |
I1LV3216ISD-5SI I1LV3216ISD-7SI R1LV3216RSD-5S R1L |
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
|
Renesas Electronics Corporation
|
R1LV0808ASB-7SI R1LV0808ASB-5SI |
8Mb Advanced LPSRAM (1024k word x 8bit)
|
Renesas Electronics Corporation
|
RMLV0408E RMLV0408EGSA-5S2 RMLV0414EGSB-5S2 RMLV04 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
RMLV0416EGBG-5S2 RMLV0416EGSB-5S2 RMLV0416EGBG-4S2 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
R1LV1616R0709 R1LV1616RBG-7S R1LV1616RBG-8S R1LV16 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
Renesas Electronics Corporation
|
RMLV0414E-15 |
4Mb Advanced LPSRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
RMLV0408E-16 |
4Mb Advanced LPSRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
GT28F160B3-T120 GT28F160B3-T150 GT28F400B3-T120 GT |
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 智能3高级启动块字 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 1M X 16 FLASH 3V PROM, 150 ns, PBGA48 TRANSFORMER CURRENT 75.0 AMP 智能3高级启动块字 LEAD, N PLG-PLG 50R, 1.2M; Connector type A:N Plug; Connector type B:N Plug; Length, lead:1.2m; Cable type:RG213; Impedance:50R; Coaxial cable type:RG213 RoHS Compliant: Yes
|
http:// Intel, Corp. ON Semiconductor Intel Corp.
|
M40SZ100WMQ6F |
3 V NVRAM supervisor for LPSRAM
|
ST Microelectronics
|
MR27V6452DMA MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|