| PART |
Description |
Maker |
| IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A)
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
|
IRF[International Rectifier]
http://
|
| BSM682F |
MOSFET power module, 800V, 6 x 10A
|
Siemens
|
| STD2NB80 6424 STD2NB80T4 |
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 1.9AI（四）|52AA
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| STW12NK80Z |
CONNECTOR ACCESSORY
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 800V - 0.65 OHM - 10.5 A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
| P5NK80Z STP5NK80Z P5NK80ZFP STP5NK80ZFP |
N-channel 800V - 1.9- 4.3A - TO-220/TO-220FP Zener-protected SuperMESHPower MOSFET
N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET
N-channel 800V - 1.9ヘ - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH⑩ Power MOSFET
|
意法半导
STMicroelectronics
|
| IRFBE30L IRFBE30S |
800V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRKVF180-08HKN IRKTF180-08HKN IRKLF180-12HKN IRKNF |
THYRISTOR MODULE|SCR|DUAL|CA|800V V(RRM)|180A I(T)
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|CA|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|180A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|CA|1.2KV V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|800V V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|180A I(T)
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|180A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|180A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 180A我（翻译
|
Ironwood Electronics
|
| IRFK4HE50 |
800V,26A,N-Channel HEXFET Power MOSFET(800V,26A,N沟道 HEXFET 功率MOS场效应管) 800V的，26A，N沟道HEXFET功率MOSFET00V的，26A条，沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| 2RI150E |
POWER DIODE MODULE 600V,800V / 150A 2 in one-package
|
Taiwan Semiconductor Company, Ltd
|
| 5N80G-TA3-T 5N80L-TA3-T 5N80G-TF1-T 5N80G-TF3-T 5N |
5A, 800V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
