| PART |
Description |
Maker |
| IN4736A IN4732A IN4739A IN4748A IN4733A IN4757A IN |
Zeners
51V, 1W Zener Diode
1 Watt Zeners
(IN4728A ~ IN4764A) Zeners
Zeners 齐纳基准
5.1V, 1W Zener Diode
5.6V, 1W Zener Diode
3.3V, 1W Zener Diode
4.3V, 1W Zener Diode
7.5V, 1W Zener Diode
9.1V, 1W Zener Diode
8.2V, 1W Zener Diode
6.2V, 1W Zener Diode
4.7V, 1W Zener Diode
3.6V, 1W Zener Diode
3.9V, 1W Zener Diode
22V, 1W Zener Diode
43V, 1W Zener Diode
6.8V, 1W Zener Diode
16V, 1W Zener Diode
20V, 1W Zener Diode
13V, 1W Zener Diode
30V, 1W Zener Diode
18V, 1W Zener Diode
47V, 1W Zener Diode
36V, 1W Zener Diode
10V, 1W Zener Diode
56V, 1W Zener Diode
33V, 1W Zener Diode
15V, 1W Zener Diode
39V, 1W Zener Diode
11V, 1W Zener Diode
27V, 1W Zener Diode
12V, 1W Zener Diode 12 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
30 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
24V, 1W Zener Diode
COLOR BAND DENOTES CATHODE
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http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| 1N5232A 1N5221A 1N5221B 1N5221C 1N5221D 1N5270B 1N |
22 V, 5.6 mA, zener diode
13 V, 9.5 mA, zener diode
36 V, 3.4 mA, zener diode
3.3 V, 20 mA, zener diode
30 V, 4.2 mA, zener diode
15 V, 8.5 mA, zener diode
8.7 V, 20 mA, zener diode
2.5 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
3.3 V, 20 mA, zener diode
19 V, 6.6 mA, zener diode
33 V, 3.8 mA, zener diode
56 V, 2.2 mA, zener diode
11 V, 20 mA, zener diode
28 V, 4.5 mA, zener diode
24 V, 5.2 mA, zener diode
60 V, 2.1 mA, zener diode
60 V, 2.1 mA, zener diode
39 V, 3.2 mA, zener diode
39 V, 3.2 mA, zener diode
17 V, 7.4 mA, zener diode
14 V, 9.0 mA, zener diode
12 V, 20 mA, zener diode
18 V, 7.0 mA, zener diode
5.6 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
87 V, 1.4 mA, zener diode
4.7 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
7.5 V, 20 mA, zener diode
110 V, 1.1 mA, zener diode
2.8 V, 20 mA, zener diode
24 V, 5.2 mA, zener diode
28 V, 4.5 mA, zener diode
25 V, 5.0 mA, zener diode
1N52 SERIES ZENER DIODES
FKC 2.5/6-STF
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
2.5 V, 20 mA, zener diode
36 V, 3.4 mA, zener diode
9.1 V, 20 mA, zener diode
11 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
110 V, 1.1 mA, zener diode
3.9 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
16 V, 7.8 mA, zener diode
12 V, 20 mA, zener diode
3.9 V, 20 mA, zener diode
43 V, 3.0 mA, zener diode
68 V, 1.8 mA, zener diode
68 V, 1.8 mA, zener diode
56 V, 2.2 mA, zener diode
30 V, 4.2 mA, zener diode
43 V, 3.0 mA, zener diode
6.2 V, 20 mA, zener diode
3.0 V, 20 mA, zener diode
33 V, 3.8 mA, zener diode
14 V, 9.0 mA, zener diode
8.2 V, 20 mA, zener diode
2.8 V, 20 mA, zener diode
6.8 V, 20 mA, zener diode
75 V, 1.7 mA, zener diode
10 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
75 V, 1.7 mA, zener diode
51 V, 2.5 mA, zener diode
100 V, 1.3 mA, zener diode
8.7 V, 20 mA, zener diode
22 V, 5.6 mA, zener diode
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LRC[Leshan Radio Company]
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| ESD9X3.3S ESD9X3.3ST5 ESD9X5.0ST5 |
ESD Protection Diodes(ESD淇??浜??绠?
ESD Protection Diodes(ESD保护二极 ESD保护二极管（防静电保护二极管
ESD Protection Single Diode In Ultra Small SOD-923 Package
|
ON Semiconductor
ONSEMI
|
| WT-Z106N-AU4 |
Zener Diode Chips for ESD Protection
|
Weitron Technology
|
| DF3A8.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2LFU07 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S8.2FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2LFE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
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